Evaluation of SiC JFETs for a Three-Phase Current-Source Rectifier with High Switching Frequency

@article{Cass2007EvaluationOS,
  title={Evaluation of SiC JFETs for a Three-Phase Current-Source Rectifier with High Switching Frequency},
  author={Callaway J. Cass and Yi Wang and Rolando Burgos and T. Paul Chow and Fred Wang and Dushan Boroyevich},
  journal={APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition},
  year={2007},
  pages={345-351}
}
This paper presents the switching characterization of 1200 V, 5 A SiC JFET prototype devices for application in an AC three-phase current-source rectifier (CSR) with a switching frequency of 150 kHz. The result of device on-resistance is shown as a function of junction temperature. Using a simplified gate drive design, the switching characteristics of the SiC JFET are measured experimentally at voltage levels up to 600 V, current up to 5 A, junction temperature up to 200 °C, and varying gate… CONTINUE READING
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