Evaluation of SiC JFETs for a Three-Phase Current-Source Rectifier with High Switching Frequency

  title={Evaluation of SiC JFETs for a Three-Phase Current-Source Rectifier with High Switching Frequency},
  author={Callaway J. Cass and Yi Wang and Rolando Burgos and T. Paul Chow and Fred Wang and Dushan Boroyevich},
  journal={APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition},
This paper presents the switching characterization of 1200 V, 5 A SiC JFET prototype devices for application in an AC three-phase current-source rectifier (CSR) with a switching frequency of 150 kHz. The result of device on-resistance is shown as a function of junction temperature. Using a simplified gate drive design, the switching characteristics of the SiC JFET are measured experimentally at voltage levels up to 600 V, current up to 5 A, junction temperature up to 200 °C, and varying gate… CONTINUE READING
Highly Cited
This paper has 38 citations. REVIEW CITATIONS
30 Citations
11 References
Similar Papers


Publications citing this paper.
Showing 1-10 of 30 extracted citations


Publications referenced by this paper.
Showing 1-10 of 11 references

Turn-off and short circuit [10] M

  • B. Weis, M. Braun, P. Friedrichs
  • H. Bierhoff and F. W. Fuchs, "Semiconductor…
  • 2004
1 Excerpt

Demonstration of Silicon Carbide (SiC)-Based Motor Drive

  • H. R. Chang, E. Hanna, A. V. Radun
  • Proc. IECON 2003
  • 2003
1 Excerpt

First inverter using silicon carbide power switches only

  • H. Schierling Rebbereh, M. Braun
  • Proc . EPE
  • 2003

and J

  • F. Schafmeister, S. Herold
  • W. Kolar, "Evaluation of 1200 V-Si- IGBTs and…
  • 2003
2 Excerpts

and M

  • C. Rebbereh, H. Schierling
  • Braun, "First inverter using silicon carbide…
  • 2003
3 Excerpts


  • P. Friedrichs, H. Mitlehner, R. Schorner
  • 0. Dohnke, R. Elpelt, and D. (1) Stephani, "The…
  • 2001
2 Excerpts

Similar Papers

Loading similar papers…