Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update

@article{Russo2009EvaluatingTS,
  title={Evaluating the self-heating thermal resistance of bipolar transistors by DC measurements: A critical review and update},
  author={Salvatore Russo and Vincenzo d'Alessandro and L. La Spina and N. F. Rinaldi and L. K. Nanver},
  journal={2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting},
  year={2009},
  pages={95-98}
}
The most relevant techniques proposed in the literature for the extraction of the self-heating thermal resistance of bipolar transistors from measurements of their DC electrical characteristics are analyzed and compared for both GaAs HBTs and silicon BJTs. A simple procedure is presented to accurately evaluate the thermal resistance of silicon BJTs with non-negligible Early effect, for which traditional HBT-oriented methods are found to be of little value. 

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