Etching of VO<inf>x</inf> thin film in HF solution

Abstract

In this paper, the etching of VO<sub>x</sub> thin film in the diluted HF solution is investigated. It's revealed that the etching can effectively influence the film resistance but with a constant temperature coefficient of resistance (TCR). It is demonstrated that the metallic components in VO<sub>x</sub> film will be etched off and the TCR is highly related with the residual VO<sub>2</sub> and V<sub>2</sub>O<sub>5</sub> components, which can guide the TCR optimization for VO<sub>x</sub> based bolometer application.

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Cite this paper

@article{Chen2014EtchingOV, title={Etching of VOx thin film in HF solution}, author={Rong-Hong Chen and Yu-Long Jiang}, journal={2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)}, year={2014}, pages={1-3} }