Etching of VO<inf>x</inf> thin film in HF solution

Abstract

In this paper, the etching of VO<sub>x</sub> thin film in the diluted HF solution is investigated. It's revealed that the etching can effectively influence the film resistance but with a constant temperature coefficient of resistance (TCR). It is demonstrated that the metallic components in VO<sub>x</sub> film will be etched off and the TCR is highly related with the residual VO<sub>2</sub> and V<sub>2</sub>O<sub>5</sub> components, which can guide the TCR optimization for VO<sub>x</sub> based bolometer application.

Showing 1-9 of 9 references

Solid State Physics Laboratory

  • R K Bhan, R S Saxena, C R Jalwania, S K Lomash
  • 2009
Highly Influential
4 Excerpts

Electron Device Letters, Vo1

  • Rong-Hong Chen, Yu-Long Jiang, Bing-Zong Li
  • 2014
1 Excerpt

Optics & Laser Technology

  • R M Oksuzoglu, P Bilgic, M Ylldmm, O Deniz
  • 2013
1 Excerpt

J Sol-Gel Sci Technol

  • C Huang, Chen L H Xu, G Miao
  • 2012

J. Appl. Phys

  • N J Podraza, B D Gauntt, M A Motyka, E C Dickey, M W Horn
  • 2012
1 Excerpt

Infrared Physics & Technology

  • I ] Hongchen Wang, Guang Xinjian, Jing Xiao Xiongwei Huang, Sihai Li, Chen
  • 2009

J. Phys.D: Appl. Phys

  • A Ubrahmanyam, Y Bharat Kumar Reddy, C L Nagendra
  • 2008
1 Excerpt

Ann. Phys., Vo1.l3

  • U Schwingenschlogl, V Eyert
  • 2004
2 Excerpts

J. Cryst. Growth

  • M Pan, J Liu, H M Zhong, Wang S W Li, Chen X H, Lu W
  • 2004