• Corpus ID: 137162694

Estymacja parametrów modelu termicznego elementów półprzewodnikowych

@inproceedings{Grecki2006EstymacjaPM,
  title={Estymacja parametr{\'o}w modelu termicznego element{\'o}w p{\'o}łprzewodnikowych},
  author={Krzysztof G{\'o}recki and Janusz Zarębski},
  year={2006}
}
No Paper Link Available
12 Citations
Highly Influential Citations
1
Background Citations
2
Methods Citations
5

12 Citations

Compact Thermal Models of Semiconductor Devices – a Review

The problem of the usefulness range of compact thermal models in the analysis of electronic elements and circuits is discussed on the basis of investigations performed in Gdynia Maritime University.

Non-linear compact thermal model of IGBTs

  • P. GóreckiK. Górecki
  • Engineering
    2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition
  • 2017
In the paper the form of the non-linear compact thermal model of the IGBT is proposed. This model is based on the idea of transient thermal impedance. It takes into account influence of the power…

Wyniki pomiarów parametrów termicznych tranzystora SiC JFET

Modeling the Influence of Selected Factors on Thermal Resistance of Semiconductor Devices

  • K. GóreckiJ. Zarebski
  • Engineering
    IEEE Transactions on Components, Packaging and Manufacturing Technology
  • 2014
In this paper, the analytical description of the nonlinear thermal model of the semiconductor device considering the influence of the selected factors on its thermal resistance is proposed. The…

The influence of the selected factors on transient thermal impedance of semiconductor devices

  • K. GóreckiJ. Zarebski
  • Engineering
    2014 Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems (MIXDES)
  • 2014
The usefulness of the presented method is shown for the selected power MOS transistors operating at different cooling conditions.

The influence of the mounting manner of the power LEDs on its thermal and optical parameters

  • K. GóreckiPrzemysław Ptak
  • Physics
    2014 Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems (MIXDES)
  • 2014
The measuring-set to measure thermal and optical parameters of the considered semiconductor devices is described and some results of measurements of transient thermal impedance and illuminance emitted by power LEDs operating at different cooling conditions are presented.

Measuring system for determining thermal parameters of semiconductor devices

  • J. ZarebskiK. GóreckiJ. Dąbrowski
  • Engineering, Materials Science
    Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems - MIXDES 2013
  • 2013
The measuring system, elaborated by the authors, for determining thermal parameters of semiconductor devices with the use of electrical methods, is presented and a sample circuit solution dedicated for measurements of diodes is described.

Parameter estimation of the electrothermal model of the ferromagnetic core

  • K. GóreckiM. RogalskaJ. Zarebski
  • Materials Science
    Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems - MIXDES 2013
  • 2013

The compact thermal model of the pulse transformer

  • K. GóreckiM. Rogalska
  • Physics, Engineering
    19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)
  • 2013

Modelling the UCC3800 controller in SPICE with the electrothermal phenomena taken into account

A new electrothermal compact model of the current mode pulse width modulation controller—UCC3800—dedicated for SPICE is proposed in this paper. The form of this model is presented and described in…

References

SHOWING 1-9 OF 9 REFERENCES

Impulsowe metody pomiaru parametrów termicznych tranzystora Darlingtona mocy

Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization. I. Fundamentals and theory

In this paper, a careful theoretical analysis of the thermal dynamics of an electronic device and its package was carried out in order to study the problem of the equivalent thermal circuit…

A method of the BJT transient thermal impedance measurement with double junction calibration

  • J. ZarebskiK. Górecki
  • Engineering
    Proceedings of 1995 IEEE/CPMT 11th Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)
  • 1995
In the paper a new method of the transient thermal impedance measurement of the bipolar transistor (BJT) is presented. This method is based on the conception of the double calibration of the…

A new evaluation method of thermal transient measurement results

Thermal investigations of ICs and microstructures

Identification of RC networks by deconvolution: chances and limits

This paper deals with the identification of RC networks from their time- or frequency-domain responses. A new method is presented based on a recent approach of the network description where all…

Semiconductor measurement technology: Thermal resistance measurements

Badanie charakterystyk termometrycznych elementów półprzewodnikowych ze złączem p-n

System mikrokomputerowy do pomiaru parametrów termicznych elementów półprzewodnikowych i układów scalonych