Estimation of Trap Density in AlGaN/GaN HEMTs from Subthreshold Slope Study

Abstract

In this paper, we first demonstrate effects of thermal annealing on subthreshold slope in AlGaN/GaN HEMTs. Then, based on the temperature dependence of subthreshold slope, we introduce a new method to estimate interface trap density in these devices.The understanding of this interface trap is critical to optimize the gate modulation efficiency of these… (More)

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