Estimation of Device Parameters and C-V Modeling of Pulsed Laser Deposited Phosphorus Doped Carbon/p-Silicon Heterostructure

Abstract

A heterostructure, fabricated by depositing phosphorus (P) doped carbon thin film, thickness of which is about 200 nm, on boron doped crystalline silicon (Si) substrate by pulsed laser deposition (PLD) technique, is studied in terms of its opto-electronic characteristics. Optical transmittance-reflectance measurements, temperature dependent conductivity… (More)

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