Errors in Flash-Memory-Based Solid-State Drives: Analysis, Mitigation, and Recovery

@article{Cai2017ErrorsIF,
  title={Errors in Flash-Memory-Based Solid-State Drives: Analysis, Mitigation, and Recovery},
  author={Yu Cai and Saugata Ghose and Erich F. Haratsch and Yixin Luo and Onur Mutlu},
  journal={CoRR},
  year={2017},
  volume={abs/1711.11427}
}
NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology scaling; and (2) multi-level (e.g., MLC, TLC) cell data coding. Unfortunately, the reliability of raw data stored in flash memory has also continued to become more difficult to ensure, because these two trends lead to (1) fewer electrons in the flash memory… CONTINUE READING
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