Erbium-implanted high-Q silica toroidal microcavity laser on a silicon chip

@inproceedings{Min2004ErbiumimplantedHS,
  title={Erbium-implanted high-Q silica toroidal microcavity laser on a silicon chip},
  author={Bumki Min and Tobias J Kippenberg and Lan Yang and Kerry J. Vahala and Jeroen Kalkman and Albert Polman},
  year={2004}
}
Lasing from an erbium-doped high-Q silica toroidal microcavity coupled to a tapered optical fiber is demonstrated and analyzed. Average erbium ion concentrations were in the range 0.009–0.09 at. %, and a threshold power as low as 4.5 µW and an output lasing power as high as 39.4 µW are obtained from toroidal cavities with major diameters in the range 25–80 µm. Controlling lasing wavelength in a discrete way at each whispering-gallery mode was possible by changing the cavity loading, i.e., the… CONTINUE READING

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