Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers.

Abstract

Epitaxial films of neodymium-doped sapphire have been grown by molecular beam epitaxy on R-, A-, and M-plane sapphire substrates. The emission spectrum features sharp lines consistent with single-site doping of the Nd(3+) ion into the host crystal. This material is believed to be a nonequilibrium phase, inaccessible by conventional high-temperature growth methods. Neodymium-doped sapphire has a promising lasing line at 1096 nm with an emission cross section of 11.9x10(-19) cm(2), similar to the 1064 nm line of Nd:YVO(4).

DOI: 10.1364/OL.34.003358

Cite this paper

@article{Kumaran2009EpitaxialNS, title={Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers.}, author={Raveen Kumaran and Scott Webster and Shawn Penson and Wei Li and Thomas Tiedje and Peng Wei and François Schiettekatte}, journal={Optics letters}, year={2009}, volume={34 21}, pages={3358-60} }