Epitaxial growth of single-domain graphene on hexagonal boron nitride.

@article{Yang2013EpitaxialGO,
  title={Epitaxial growth of single-domain graphene on hexagonal boron nitride.},
  author={Wei Yang and Guorui Chen and Zhiwen Shi and Cheng-cheng Liu and Lianchang Zhang and Guibai Xie and Meng Cheng and Duoming Wang and Rong Yang and Dongxia Shi and Kenji Watanabe and Takashi Taniguchi and Yugui Yao and Yuanbo Zhang and Guangyu Zhang},
  journal={Nature materials},
  year={2013},
  volume={12 9},
  pages={
          792-7
        }
}
Hexagonal boron nitride (h-BN) has recently emerged as an excellent substrate for graphene nanodevices, owing to its atomically flat surface and its potential to engineer graphene's electronic structure. Thus far, graphene/h-BN heterostructures have been obtained only through a transfer process, which introduces structural uncertainties due to the random stacking between graphene and h-BN substrate. Here we report the epitaxial growth of single-domain graphene on h-BN by a plasma-assisted… CONTINUE READING
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