Epitaxial growth of FeSe$_{0.5}$Te$_{0.5}$ thin films on CaF$_2$ substrates with high critical current density

@article{Tsukada2011EpitaxialGO,
  title={Epitaxial growth of FeSe\$\_\{0.5\}\$Te\$\_\{0.5\}\$ thin films on CaF\$\_2\$ substrates with high critical current density},
  author={Ichiro Tsukada and Masafumi Hanawa and Takanori Akiike and Fuyuki Nabeshima and Yoshinori Imai and Ataru Ichinose and Seiki Komiya and Tatsuo Hikage and Takahiko Kawaguchi and Hiroshi Ikuta and Atsutaka Maeda},
  journal={arXiv: Superconductivity},
  year={2011}
}
In-situ epitaxial growth of FeSe$_{0.5}$Te$_{0.5}$ thin films is demonstrated on a non-oxide substrate CaF$_2$. Structural analysis reveals that compressive stress is moderately added to 36-nm thick FeSe$_{0.5}$Te$_{0.5}$, which pushes up the critical temperature above 15 K, showing higher values than that of bulk crystals. Critical current density at $T$ = 4.5 K reaches 5.9 x 10$^4$ Acm$^{-2}$ at $\mu_0H$ = 10 T, and 4.2 x 10$^4$ Acm$^{-2}$ at $\mu_0H$ = 14 T. These results indicate that… 

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