Epitaxial growth and layer transfer of InP via electrochemically etching / annealing of porous buried InP layers: A pathway for III–V substrate re-use

@article{Kou2015EpitaxialGA,
  title={Epitaxial growth and layer transfer of InP via electrochemically etching / annealing of porous buried InP layers: A pathway for III–V substrate re-use},
  author={Xufeng Kou and Mark. S. Goorsky},
  journal={2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)},
  year={2015},
  pages={1-3}
}
High crystalline quality InP is epitaxially grown on porous InP layers and characterized. Etching the wafers in hydrochloric acid with different concentrations and current densities create a dual layer porous structure with a more dense top layer for epitaxial growth and a buried porous layer. Annealing the structure forms voids in the buried layer. Epitaxial layers with thickness of about 2 μm were grown on dense layers. The layers grown were analyzed by transmission electron microscopy and… CONTINUE READING

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