Epitaxial growth and lattice match of cobalt and nickel disilicides/Si(111) gold and cobalt doping of NiSi2

@inproceedings{Mangelinck1996EpitaxialGA,
  title={Epitaxial growth and lattice match of cobalt and nickel disilicides/Si(111) gold and cobalt doping of NiSi2},
  author={Dominique Mangelinck and Pierre Stocker and Bernard Pichaud and Patrick Gas},
  year={1996}
}
Abstract We report on an X-ray diffraction study of the epitaxial growth of thick films of cobalt and nickel disilicides on silicon. The lattice parameters both parallel and normal to the interface are measured at room temperature (RT) for various samples prepared by solid phase epitaxy or reactive deposition epitaxy with annealing at high temperature (600–800°C). The formation of a rigid disilicide/silicon interface with a dislocation network frozen below a critical temperature T D , estimated… CONTINUE READING