Epitaxial graphene

@inproceedings{Heer2007EpitaxialG,
  title={Epitaxial graphene},
  author={W. D. Heer and C. Berger and Xiaosong Wu and P. First and E. Conrad and Xuebin Li and Tianbo Li and M. Sprinkle and J. Hass and M. Sadowski and M. Potemski and G. Mart{\'i}nez},
  year={2007}
}
Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry’s phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and… Expand
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