Epitaxial graphene

  title={Epitaxial graphene},
  author={Walt A. de Heer and Claire Berger},
  journal={Journal of Physics D: Applied Physics},
Epitaxial graphene on silicon carbide: Introduction to structured graphene
We present an introduction to the rapidly growing field of epitaxial graphene on silicon carbide, tracing its development from the original proof-of-concept experiments a decade ago to its present,
Epitaxial graphene: A new electronic material for the 21st century
Graphene has been known for a long time, but only recently has its potential for electronics been recognized. Its history is recalled starting from early graphene studies. A critical insight in June
The invention of graphene electronics and the physics of epitaxial graphene on silicon carbide
Graphene electronics was officially invented at the Georgia Institute of Technology in 2003 after experimental and theoretical research on graphene properties starting from 2001. This paper focuses
Epitaxial graphene electronic structure and transport
Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon
Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
The CCS method is now applied on structured silicon carbide surfaces to produce high mobility nano-patterned graphene structures thereby demonstrating that EG is a viable contender for next-generation electronics.
Electronic interface and charge carrier density in epitaxial graphene on silicon carbide. A review on metal–graphene contacts and electrical gating
For over 15 years, the number of studies on graphene electronics has not ceased growing. The rich physics, a set of outstanding properties, and the envisioned range of potential applications have
Electrical Properties of Chemically Derived Graphene
Graphene, an atomically thin sheet of carbon, is the most recent endeavor for the application of carbon nanostructures in conventional electronics. The envisioned creation of devices completely
Introduction to graphene electronics – a new era of digital transistors and devices
Abstract The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary
Nucleation of epitaxial graphene on SiC(0001).
This work provides the first direct evidence that nucleation of epitaxial graphene on silicon carbide occurs along the (110n) plane and shows that the nucleated graphene quality improves as the synthesis temperature is increased.


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