Epitaxial films of WS2 by metal organic van der Waals epitaxy (MO-VDWE)

@inproceedings{Tiefenbacher1994EpitaxialFO,
  title={Epitaxial films of WS2 by metal organic van der Waals epitaxy (MO-VDWE)},
  author={Stefan Tiefenbacher and H. Sehnert and Ch. Pettenkofer and Wolfram Jaegermann},
  year={1994}
}
Abstract Epitaxial films of WS 2 have been grown on graphite (HOPG) by metal organic molecular beam epitaxy (MO-MBE). As precursors W(CO) 6 and S have been used. The growth temperatures are rather high and the deposition efficiency is very low which is related to the chemical inertness of the involved van der Waals planes.