Epitaxial electro‐optical SrxBa1−xNb2O6 films by single‐source plasma‐enhanced metalorganic chemical vapor deposition

@inproceedings{Zhu1995EpitaxialES,
  title={Epitaxial electro‐optical SrxBa1−xNb2O6 films by single‐source plasma‐enhanced metalorganic chemical vapor deposition},
  author={Long D. Zhu and J. Zhao and Feiling Wang and Peter E. Norris and Gerard David Fogarty and Barbara K. Steiner and Peiqing Lu and Bernard Henry Kear and Sang Bom Kang and Bernard M. Gallois and Michael B. Sinclair and Dunne Dimos and Mark Cronin-Golomb},
  year={1995}
}
SrxBa1−xNb2O6 films have been epitaxially grown on MgO substrates by a single‐source plasma‐enhanced chemical vapor deposition (PE‐CVD). Exceptionally high quality of the epitaxial films was observed as indicated by high‐resolution synchrotron x‐ray diffraction imaging. The films exhibit waveguiding behavior with values of refractive index and the linear electro‐optic coefficient r51 close to those of bulk crystals. 

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