Epitaxial chemical vapor deposition growth of single-layer graphene over cobalt film crystallized on sapphire.

@article{Ago2010EpitaxialCV,
  title={Epitaxial chemical vapor deposition growth of single-layer graphene over cobalt film crystallized on sapphire.},
  author={Hiroki Ago and Yoshito Ito and Noriaki Mizuta and Kazuma Yoshida and Baoshan Hu and Carlo M. Orofeo and Masaharu Tsuji and Ken-ichi Ikeda and Seigi Mizuno},
  journal={ACS nano},
  year={2010},
  volume={4 12},
  pages={7407-14}
}
Epitaxial chemical vapor deposition (CVD) growth of uniform single-layer graphene is demonstrated over Co film crystallized on c-plane sapphire. The single crystalline Co film is realized on the sapphire substrate by optimized high-temperature sputtering and successive H(2) annealing. This crystalline Co film enables the formation of uniform single-layer graphene, while a polycrystalline Co film deposited on a SiO(2)/Si substrate gives a number of graphene flakes with various thicknesses… CONTINUE READING
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