Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle Process

@article{Marinace1960EpitaxialVG,
  title={Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle Process},
  author={John C. Marinace},
  journal={IBM Journal of Research and Development},
  year={1960},
  volume={4},
  pages={248-255}
}
The Ge-I2 disproportionation reaction in a sealed tube will deposit Ge epitaxially upon Ge seeds at a typical rate of 10µ/hr at a typical temperature of 400°C. Dislocations are of the same kind and approximate concentrations as observed in ordinary melt-grown Ge. Chemical purity is comparable to the best meltgrown Ge. The fraction of donors transferred from the source material to the deposited material is nearly unity over a wide range of concentrations, while the fraction of acceptors… CONTINUE READING

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Much of the information in this section is given in greater detail in the book Vapor Plating

C. F. Powell, I. E. Campbell, +3 authors New York
  • 1955