Epitaxial MgO layer for low-resistance and coupling-free magnetic tunnel junctions

@article{Popova2002EpitaxialML,
  title={Epitaxial MgO layer for low-resistance and coupling-free magnetic tunnel junctions},
  author={E. Popova and J. Faure-Vincent and C. Tiusan and C. Bellouard and H. Fischer and M. Hehn and F. Montaigne and M. Alnot and S. Andrieu and A. Schuhl and E. Snoeck and V. D. Costa},
  journal={Applied Physics Letters},
  year={2002},
  volume={81},
  pages={1035-1037}
}
Epitaxially grown magnetic tunnel junctions MgO(100)/Fe/MgO/Fe/Co/Pd have been elaborated by molecular beam epitaxy, with insulating layer thickness down to 0.8 nm. The continuity of this layer was checked at different spatial scales by means of morphological (high resolution transmission electronic microscopy), electric (local impedance), and magnetic (magnetoresistance and hysteresis loop) measurements. These junctions show a low resistance (4 kΩ μm2), tunnel magnetoresistance up to 17%, and… Expand
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Single-crystal magnetotunnel junctions
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