Epitaxial Growth of Highly Strained SiGe Layers Directly on Si(001) Substrate

@article{Halpin2012EpitaxialGO,
  title={Epitaxial Growth of Highly Strained SiGe Layers Directly on Si(001) Substrate},
  author={John E Halpin and Vishal Ajit Shah and Maksym Myronov and David R. Leadley},
  journal={2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)},
  year={2012},
  pages={1-2}
}
Highly strained epilayers of Si0.4Ge0.6 can be grown pseudomorphically on a Si (001) substrate with thicknesses up to ~25 nm. The epilayer surface morphology was analyzed by atomic force microscopy (AFM) and defects observed in the relaxed epilayers were analyzed by combination of plan view transmission electron microscopy PV-TEM and AFM.