Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene

@article{Lee2015EnhancementOR,
  title={Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene},
  author={Keundong Lee and Inrok Hwang and Sangik Lee and Sungtaek Oh and Duk Hyun Lee and Cheol Kyeom Kim and Yoonseung Nam and Sahwan Hong and Chansoo Yoon and Robert B. Morgan and Hakseong Kim and Sunae Seo and David H. Seo and Sangwook Lee and Bae Ho Park},
  journal={Scientific Reports},
  year={2015},
  volume={5}
}
Resistive random access memory (ReRAM) devices have been extensively investigated resulting in significant enhancement of switching properties. However fluctuations in switching parameters are still critical weak points which cause serious failures during ‘reading’ and ‘writing’ operations of ReRAM devices. It is believed that such fluctuations may be originated by random creation and rupture of conducting filaments inside ReRAM oxides. Here, we introduce defective monolayer graphene between an… 

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