Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth

@article{Singisetti2011EnhancementModeNG,
  title={Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth},
  author={Uttam Singisetti and Man Hoi Wong and Sambarta Dasgupta and Nidhi and B. L. Swenson and B. J. Thibeault and J. S. Speck and U. K. Mishra},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={137-139}
}
We report gate-first enhancement-mode (E-mode) N-polar GaN MISFET devices with self-aligned source/drain regions by molecular beam epitaxy regrowth and with a SiNx gate dielectric. E-mode operation at Vds = 4.0 V is demonstrated for devices with gate lengths >; 0.18 μm with a 20-nm GaN channel and a high-temperature SiNx gate dielectric. A high drain current of 0.74 A/mm was measured for an Lg = 0.62-μm device with a peak transconductance of 225 mS/mm and a positive threshold voltage of 1 V… CONTINUE READING

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