Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

@article{Hill2007EnhancementModeGM,
  title={Enhancement-Mode GaAs MOSFETs With an \$\hbox\{In\}_\{0.3\} \hbox\{Ga\}_\{0.7\}\hbox\{As\}\$ Channel, a Mobility of Over 5000 \$ \hbox\{cm\}^\{2\}/\hbox\{V\} \cdot \hbox\{s\}\$, and Transconductance of Over 475 \$\mu\hbox\{S\}/\mu\hbox\{m\}\$},
  author={R. J.W. Hill and D. A. J. Moran and Xu Li and Haiping Zhou and D. S. Macintyre and Stephen Thoms and A. Asenov and Peter Zurcher and Karthik Rajagopalan and J. Abrokwah and Ravi Droopad and Matthias Passlack and I. G. Thayne},
  journal={IEEE Electron Device Letters},
  year={2007},
  volume={28},
  pages={1080-1082}
}
We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with the highest reported effective mobility and transconductance to date. The devices employ a GaGdO high-k (k = 20) gate stack, a Pt gate, and a delta-doped InGaAs/AlGaAs/GaAs hetero-structure. Typical 1-mum gate length device figures of merit are given as follows: saturation drive current, Id,sat = 407 muA/mum; threshold voltage, Vt = +0.26 V; maximum extrinsic transconductance, gm = 477 muS/mum (the highest… CONTINUE READING
Highly Cited
This paper has 30 citations. REVIEW CITATIONS

Citations

Publications citing this paper.
Showing 1-10 of 24 extracted citations

References

Publications referenced by this paper.

Similar Papers

Loading similar papers…