Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With <inline-formula> <tex-math notation="LaTeX">$10^{-13}$ </tex-math></inline-formula> A/mm Leakage Current and <inline-formula> <tex-math notation="LaTeX">$10^{12}$ </tex-math></inline-formula> ON/OFF Current Ratio

Abstract

Postgate annealing (PGA) in N<sub>2</sub>/O<sub>2</sub> atmosphere at 300&#x00B0;C for various annealing time is performed on enhancement mode AlGaN/GaN MOSFET fabricated using a self-terminating gate recess etching technique. After 45-min annealing, the device OFF-state leakage current decreases by more than two orders of magnitude and thus a low OFF-state… (More)

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Cite this paper

@article{Xu2014EnhancementM, title={Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With \$10^\{-13\}\$ A/mm Leakage Current and \$10^\{12\}\$ ON/OFF Current Ratio}, author={Zhe Xu and Jinyan Wang and Yong Cai and Jingqian Liu and Chunyan Jin and Zhenchuan Yang and Maojun Wang and Min Yu and Bing Xie and Wengang Wu and Xiaohua Ma and Jincheng Zhang and Yue Hao}, journal={IEEE Electron Device Letters}, year={2014}, volume={35}, pages={1200-1202} }