Enhanced visible photoluminescence from ultrathin ZnO films grown on Si-nanowires by atomic layer deposition.

@article{Chang2010EnhancedVP,
  title={Enhanced visible photoluminescence from ultrathin ZnO films grown on Si-nanowires by atomic layer deposition.},
  author={Yuan-Ming Chang and Sheng-Rui Jian and Hsin-Yi Lee and Chih-Ming Lin and Jenh-Yih Juang},
  journal={Nanotechnology},
  year={2010},
  volume={21 38},
  pages={
          385705
        }
}
Bright room temperature visible emission is obtained in heterostructures consisting of approximately 3.5 nm thick ZnO ultrathin films grown on Si-nanowires produced by means of self-masking dry etching in hydrogen-containing plasma. The ZnO films were deposited on Si-nanowires by using atomic layer deposition (ALD) under an ambient temperature of 25 degrees C. The orders of magnitude enhancement in the intensity of the room temperature photoluminescence peaked around 560 nm in the present ZnO… CONTINUE READING

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