Enhanced surface diffusion in forming ion-beam-induced nanopatterns on Si ( 0 0 1 )

Abstract

The diffusion process on Si (0 0 1) in the presence of a 5 keV Ar+ ion beam has been investigated by monitoring initiation of ripple-pattern formation. The morphology of the surface obtained by scanning tunnelling microscopy measurements in ultrahigh vacuum were characterized using the height-difference correlation function. These measurements clearly show… (More)

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