Enhanced resistive switching in forming-free graphene oxide films embedded with gold nanoparticles deposited by electrophoresis.

@article{Khurana2016EnhancedRS,
  title={Enhanced resistive switching in forming-free graphene oxide films embedded with gold nanoparticles deposited by electrophoresis.},
  author={Geetika Khurana and Pankaj Misra and Nitu Kumar and Sudheendran Kooriyattil and James F. Scott and Ram Singh Katiyar},
  journal={Nanotechnology},
  year={2016},
  volume={27 1},
  pages={015702}
}
Forming-free resistive random access memory (ReRAM) devices having low switching voltages are a prerequisite for their commercial applications. In this study, the forming-free resistive switching characteristics of graphene oxide (GO) films embedded with gold nanoparticles (Au Nps), having an enhanced on/off ratio at very low switching voltages, were… CONTINUE READING