Enhanced photoluminescence from nanopatterned carbon-rich silicon grown by solid-phase epitaxy

@inproceedings{Rotem2007EnhancedPF,
  title={Enhanced photoluminescence from nanopatterned carbon-rich silicon grown by solid-phase epitaxy},
  author={Efraim Rotem and Jeffrey M. Shainline and Jimmy Xu},
  year={2007}
}
Photoluminescence from the dicarbon G center in nanopatterned silicon is investigated. Enrichment of silicon with carbon atoms has been achieved by solid-phase epitaxy. When this carbon enrichment is combined with nanopatterning, The authors found a 33-fold increase in the G line emission intensity to a level that is comparable to the band-edge photoluminescence. Significant linewidth broadening is observed and is attributed to lattice strain associated with the nanopatterning. 

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Generation and characterisation of the carbon G-centre in silicon.

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