Enhanced photoluminescence due to lateral ordering of GeSi quantum dots on patterned Si(001) substrates.


Multilayer ordered GeSi quantum dots (QDs) with thin Si spacers were obtained via self-assembly on pit-patterned Si(001) substrates. The lateral ordering of GeSi QDs predetermined by the periodic pit pattern results in remarkably improved size uniformity in comparison with random QDs on flat substrates. A much stronger and narrower photoluminescence (PL… (More)
DOI: 10.1088/0957-4484/21/17/175701


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