Enhanced photo-sensitivity through an increased light-trapping on Si by surface nano-structuring using MWCNT etch mask

Abstract

We demonstrate an enhanced photo-sensitivity (PS) through an increased light-trapping using surface nano-structuring technique by inductively coupled plasma (ICP) etching on multi-walled carbon nanotube (MWCNT) etch masked Si with hexamethyl-disilazane (HMDS) dispersion. In order for a systematic comparison, four samples are prepared, respectively, by… (More)
DOI: 10.1186/1556-276X-6-573

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