Enhanced output power using MgZnO/ZnO/MgZnO double heterostructure in ZnO homojunction light emitting diode

Abstract

A diode with Sb-doped p-type ZnO, MgZnO/ZnO/MgZnO double heterostructure, and undoped n-type ZnO layers was grown on c-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. Hall effect measurement showed that the top p-type Sb-doped ZnO layer has a hole concentration of 1 10cm . Mesa geometry light emitting diodes were fabricated with Au/Ni… (More)

Topics

6 Figures and Tables

Slides referencing similar topics