Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates

@article{Feng2005EnhancedLF,
  title={Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates},
  author={Z. H. Feng and K. M. Lau},
  journal={IEEE Photonics Technology Letters},
  year={2005},
  volume={17},
  pages={1812-1814}
}
Luminescence from GaN-based blue light-emitting diodes grown on grooved sapphire substrates was investigated using cathodoluminescence (CL) and electroluminescence (EL). The 60-nm-deep 2 (ridge) /spl times/4 /spl mu/m (trench) grooves along the <101~0> direction were created by BCl/sub 3/-Cl/sub 2/-based inductively coupled plasma reactive ion etching. Stronger CL and EL from the trench regions of the grooves in GaN and InGaN-GaN multiquantum-wells were observed, confirming its better… CONTINUE READING
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GaN-based blue lightemitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy

  • Z. H. Feng, Y. D. Qi, Z. D. Lu, K. M. Lau
  • J. Cryst. Growth, vol. 272, pp. 327–332, 2004.
  • 2004
2 Excerpts

Nitride-based LEDs fabricated on patterned sapphire substrates

  • S. J. Chang, Y. C. Lin, +7 authors C. H. Liu
  • Solid-State Electron., vol. 47, pp. 1539–1542…
  • 2003
1 Excerpt

InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode

  • M. Yamada, T. Mitani, +6 authors T. Mukai
  • Jpn. J. Appl. Phys., vol. 41, pp. L1431–L1433…
  • 2002
1 Excerpt

High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitacy

  • K. Tadatomo, H. Okagawa, +4 authors T. Taguchi
  • Jpn. J. Appl. Phys., vol. 40, pp. L583–L585, 2001…
  • 2001
1 Excerpt

Maskless epitaxial lateral overgrowth of GaN layers on structured Si (111) substrates

  • A. Strittmatter, S. Rodt, +6 authors A. Krost
  • Appl. Phys. Lett., vol. 78, pp. 727–729, 2001.
  • 2001
1 Excerpt

Low-dislocation-density GaN from a single growth on a textured substrate

  • C.I.H. Ashby, C. C. Mitchell, +5 authors L. Griego
  • Appl. Phys. Lett., vol. 77, pp. 3233–3235, 2000.
  • 2000
1 Excerpt

In situ monitoring of GaN growth in multiwafer MOVPE reactors

  • M. Lunenburger, H. Protzmann, M. Heuken, H. Jurgensen
  • Phys. Stat. Sol. (a), vol. 176, pp. 727–731, 1999…
  • 1999
2 Excerpts

High-power, long-lifetime InGaN/GaN/AlGaN-based laser diodes grown on pure GaN substrates

  • S. Nakamura, M. Senoh, +9 authors K. Chocho
  • Jpn. J. Appl. Phys., vol. 37, pp. L309–L312, 1998…
  • 1998
1 Excerpt

Defect structure in selectively grown GaN films with low threadingdislocation density

  • A. Sakai, H. Sunakawa, A. Usui
  • Appl. Phys. Lett., vol. 71, pp. 2259–2261, 1997.
  • 1997
1 Excerpt

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

  • T. S. Zheleva, O. H. Nam, M. D. Bremser, R. F. Davis
  • Appl. Phys. Lett., vol. 71, pp. 2472–2474, 1997.
  • 1997
1 Excerpt

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