Enhanced high-frequency performance in a GaAs, self-aligned, n-JFET using a carbon buried p-implant


C ion implantation has been employed, for the first time, to form the buried p-layer in GaAs, self-aligned, ion implanted JFETs. Comparable DC performance was seen for JFETs with C or Mg implants; however, C-backside JFETs showed superior high-frequency performance. High dose C-backside devices had a f/sub t/ of 28.3 GHz and a f/sub max/ of 43.2 GHz for a 0… (More)


3 Figures and Tables