Enhanced group V intermixing in InGaAs/ InP quantum wells studied by cross- sectional scanning tunneling microscopy

Abstract

Cross-sectional scanning tunneling microscopy is used to study InGaAs/ InP quantum well intermixing produced by phosphorus implantation. When phosphorus ions are implanted in a cap layer in front of the quantum wells (in contrast to earlier work involving implantation through the wells), clear strain development is observed at the interfaces between quantum… (More)

Topics

3 Figures and Tables

Slides referencing similar topics