Enhanced electrical efficiency of quantum dot based LEDs with TiO2 as the electron transport layer fabricated under the optimized annealing-time conditions.

Abstract

We report Quantum dot based light emitting diodes (QD-LEDs) fabricated under the optimized annealing conditions of TiO2 films used as the electron transport layer (ETL) in the device. Films of different thicknesses were fabricated by varying annealing conditions leading to the improved electrical properties in QD-LEDs. Under the optimized annealing conditions both the turn-on voltage and voltage-drop across the device were minimized as a result of the increased electrical conductivity of ETL. Due to the minimum turn-on voltage and voltage-drop across the device the overall electrical performance of QD-LED device in our case has been improved by 81.5 percent.

Cite this paper

@article{Qasim2012EnhancedEE, title={Enhanced electrical efficiency of quantum dot based LEDs with TiO2 as the electron transport layer fabricated under the optimized annealing-time conditions.}, author={Khan Qasim and Jing Chen and Yidan Zhou and Wei Lei}, journal={Journal of nanoscience and nanotechnology}, year={2012}, volume={12 10}, pages={7879-84} }