Enhanced charge storage capability of Ge/GeO(2) core/shell nanostructure.


A Ge/GeO(2) core/shell nanostructure embedded in an Al(2)O(3) gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO(2) core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on… (More)
DOI: 10.1088/0957-4484/19/35/355206

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