Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide.

@article{Balendhran2013EnhancedCC,
  title={Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide.},
  author={Sivacarendran Balendhran and Junkai Deng and Jian Zhen Ou and Sumeet Walia and James Scott and Jianshi Tang and Kang L Wang and Matthew Richard Field and Salvy P. Russo and Serge Zhuiykov and Michael S. Strano and Nikhil V Medhekar and Sharath Sriram and Madhu Bhaskaran and Kourosh Kalantar-Zadeh},
  journal={Advanced materials},
  year={2013},
  volume={25 1},
  pages={109-14}
}
We demonstrate that the energy bandgap of layered, high-dielectric α-MoO(3) can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO(3) of ∼11 nm thickness and carrier mobilities larger than 1100 cm(2) V(-1) s(-1) are obtained. 
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