Enhanced Metal-Insulator Transition in Freestanding VO2 Down to 5 nm Thickness.

  title={Enhanced Metal-Insulator Transition in Freestanding VO2 Down to 5 nm Thickness.},
  author={Kun Han and Liang Wu and Yu Cao and Hanyu Wang and Chen Ye and Ke Huang and M. Motapothula and Hongna Xing and Xinghua Li and Dong-chen Qi and Xiao Li and Xiao Renshaw Wang},
  journal={ACS applied materials \& interfaces},
Ultrathin freestanding membranes with a pronounced metal-insulator transition (MIT) have huge potential for future flexible electronic applications as well as provide a unique aspect for the study of lattice-electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm) is typically detrimental to the MIT in epitaxial films, and even catastrophic for their freestanding form. Here, we report an enhanced MIT in VO2-based freestanding membranes, with a lateral size… 
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