Enhanced Critical Electrical Characteristics in a Nanoscale Low-Voltage SOI MOSFET With Dual Tunnel Diode

@article{Anvarifard2015EnhancedCE,
  title={Enhanced Critical Electrical Characteristics in a Nanoscale Low-Voltage SOI MOSFET With Dual Tunnel Diode},
  author={Mohammad Kazem Anvarifard and Ali Asghar Orouji},
  journal={IEEE Transactions on Electron Devices},
  year={2015},
  volume={62},
  pages={1672-1676}
}
This brief presents a nanoscale low-voltage partially depleted silicon-on-insulator (SOI) structure with improved electrical performance. The brain of the proposed structure is a dual tunnel diode (DTD) composed of a heavily doped p-type L-shaped trench. The accumulated holes are effectively released by the tunnel current of DTD, thus reducing the critical… CONTINUE READING