Engineering strained silicon-looking back and into the future

@article{Acosta2006EngineeringSS,
  title={Engineering strained silicon-looking back and into the future},
  author={Tayro Acosta and Sumant Sood},
  journal={IEEE Potentials},
  year={2006},
  volume={25},
  pages={31-34}
}
The purpose of this article is to explain the basics behind straining and report on the current process technologies available to strain CMOS devices. Strained Si enhances the performance of CMOS devices by increasing carrier mobility without having to make them smaller. As the benefits to be gained from scaling transistors continue to decrease, the commercial interest in using strained Si for CMOS devices has spiked. Additionally, strained Si still retains its integratability in CMOS… CONTINUE READING
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Mechanically induced strain enhancement of metaloxidesemi - conductor field effect transistors

  • L. A. Bosworth
  • Proc . IEDM
  • 2003

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