Engineering Vacancies in Bi2S3 yielding Sub‐Bandgap Photoresponse and Highly Sensitive Short‐Wave Infrared Photodetectors

@article{Huo2019EngineeringVI,
  title={Engineering Vacancies in Bi2S3 yielding Sub‐Bandgap Photoresponse and Highly Sensitive Short‐Wave Infrared Photodetectors},
  author={Nengjie Huo and Alberto Figueroba and Yujue Yang and Sotirios Christodoulou and Alexandros Stavrinadis and C'esar Mag'en and Gerasimos Konstantatos},
  journal={Advanced Optical Materials},
  year={2019},
  volume={7}
}
Defects play an important role in tailoring the optoelectronic properties of materials. Supported by density functional theory (DFT) calculations, herein it is demonstrated that sulphur vacancies are able to engineer sub‐band gap photoresponse in the short‐wave infrared range due to formation of in‐gap states in Bi2S3 single crystals. Sulfurization and subsequent refill of the vacancies result in faster response but limit the spectral range to the near infrared as determined by the bandgap of… 

Interplay of charge transfer and disorder in optoelectronic response in Graphene/hBN/MoS2 van der Waals heterostructures

Strong optoelectronic response in the binary van der Waals heterostructures of graphene and transition metal dichalcogenides (TMDCs) is an emerging route towards high-sensitivity light sensing. While

Recent Progress in Short‐ to Long‐Wave Infrared Photodetection Using 2D Materials and Heterostructures

The extraordinary electronic, optical, and mechanical characteristics of 2D materials make them promising candidates for optoelectronics, specifically in infrared (IR) detectors owing to their

Vacancy doping and charge transport in Bi2S3 nanoparticle films for photovoltaic applications

Native point defect doping via thermal treatment is an easy and promising method to tune the electrical transport properties of semiconductors made for renewable-energy conversion. In this study, we

Gate‐Tunable Photovoltaic Effect in MoTe2 Lateral Homojunction

Since it is urgent to develop flexibly tunable photosensors in artificial vision network, atomically thin 2D materials are promising candidates for susceptible gate modulation and thickness‐dependent

In‐plane Epitaxy of Bi2S3 Nanowire Arrays for Ultrasensitive NIR Photodetectors

The direct growth of semiconductor nanowire (NW) arrays horizontally aligned on a substrate is critically important for the applications of NWs in electronic or optoelectronic devices at the circuit

Thermoelectric Properties of Sub-stoichiometric Electron Beam Patterned Bismuth Sulfide.

The synthesis, characterization, and direct writing of sub-10 nm wide bismuth sulfide (Bi2S3) is reported using a single source, spin coatable, and electron beam sensitive bismUTH(III) ethylxanthate precursor.

Alternative Lone‐Pair ns2‐Cation‐Based Semiconductors beyond Lead Halide Perovskites for Optoelectronic Applications

Alternative Pb-free semiconductors containing lone-pair ns2 cations aresummarized, intending to offer insights for developing potential optoelectronic materials other than lead halide perovskites.

Review of recent progress, challenges, and prospects of 2D materials-based short wavelength infrared photodetectors

The interest in 2D layered materials based short wavelength infrared (SWIR) photodetectors (PDs) has escalated over the years with the introduction of new 2D materials showing intriguing

References

SHOWING 1-10 OF 46 REFERENCES

Colloidal Bi2S3 Nanocrystals: Quantum Size Effects and Midgap States

Among solution‐processed nanocrystals containing environmentally benign elements, bismuth sulfide (Bi2S3) is a very promising n‐type semiconductor for solar energy conversion. Despite the prompt

High-performance photodetectors based on Sb2S3 nanowires: wavelength dependence and wide temperature range utilization.

The results indicate that low-dimensional Sb2S3 crystals are promising candidates for new multifunctional optoelectronic devices.

MoS2–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

This work demonstrates for the first time the potential of the hybrid 2D/QD detector technology in reaching out to wavelengths beyond 2 µm with compelling sensitivity.

Fast and Sensitive Colloidal Quantum Dot Mid-Wave Infrared Photodetectors.

The enhanced sensitivity of the HgTe CQD photodetectors reported here should motivate interest in a cheap, solution-processed MWIRPhotodetector for applications extending beyond research and military defense.

High Performances for Solution‐Pocessed 0D–0D Heterojunction Phototransistors

All‐inorganic cesium lead halide perovskite nanocrystals have emerged as attractive optoelectronic nanomaterials due to their stabilities and highly efficient photoluminescence. High‐sensitivity

Efficient mixed-solvent exfoliation of few-quintuple layer Bi2S3 and its photoelectric response

It is found that 10% deionized water in 90% isopropyl alcohol is the best mixed solvent for the efficient and effective exfoliation of layered Bi2S3.

Exfoliation of quasi-stratified Bi2S3 crystals into micron-scale ultrathin corrugated nanosheets

There is ongoing interest in exploring new two-dimensional materials and exploiting their functionalities. Here, a top-down approach is used for developing a new morphology of ultrathin nanosheets

Co-nucleus 1D/2D Heterostructures with Bi2S3 Nanowire and MoS2 Monolayer: One-Step Growth and Defect-Induced Formation Mechanism.

The one-step growth of a heterostructure on the basis of a 1D-Bi2S3 nanowire and a 2D-MoS2 monolayer through the CVD method is demonstrated to gain a better comprehension of these specific configurations and allow device functionalities in potential applications.

A Simple Approach Low-Temperature Solution Process for Preparation of Bismuth-Doped ZnO Nanorods and Its Application in Hybrid Solar Cells

A simple low-temperature solution processed bismuth-doped ZnO nanorods (NRs) and poly(3-hexylthiophene) (P3HT) were used as electron acceptor and donor, respectively, in a hybrid inorganic–organic

Facile fabrication and characterization of two-dimensional bismuth(iii) sulfide nanosheets for high-performance photodetector applications under ambient conditions.

The present work can provide fundamental acknowledgement of the high performance of this new kind of PEC-type 2D nanosheet-based photodetector.