Engineering Vacancies in Bi2S3 yielding Sub‐Bandgap Photoresponse and Highly Sensitive Short‐Wave Infrared Photodetectors

  title={Engineering Vacancies in Bi2S3 yielding Sub‐Bandgap Photoresponse and Highly Sensitive Short‐Wave Infrared Photodetectors},
  author={Nengjie Huo and Alberto Figueroba and Yujue Yang and Sotirios Christodoulou and Alexandros Stavrinadis and C'esar Mag'en and Gerasimos Konstantatos},
  journal={Advanced Optical Materials},
Defects play an important role in tailoring the optoelectronic properties of materials. Supported by density functional theory (DFT) calculations, herein it is demonstrated that sulphur vacancies are able to engineer sub‐band gap photoresponse in the short‐wave infrared range due to formation of in‐gap states in Bi2S3 single crystals. Sulfurization and subsequent refill of the vacancies result in faster response but limit the spectral range to the near infrared as determined by the bandgap of… 

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