Corpus ID: 119217901

Engineering Quantum Confinement in Semiconducting van der Waals Heterostructure

  title={Engineering Quantum Confinement in Semiconducting van der Waals Heterostructure},
  author={K. Wang and T. Taniguchi and K. Watanabe and P. Kim},
  journal={arXiv: Mesoscale and Nanoscale Physics},
Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) have the potential to add a unique additional control of quantum degrees of freedom owing to valley-spin locking of confined carriers near the band edges. However, due to prevailing inhomogeneities in the conducting channels, it has been… Expand
10 Citations
Electrotunable artificial molecules based on van der Waals heterostructures
Quantum transport through MoS2 constrictions defined by photodoping.
Three-electron spin qubits.
  • M. Russ, G. Burkard
  • Physics, Medicine
  • Journal of physics. Condensed matter : an Institute of Physics journal
  • 2017


Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.
Quantum dot behavior in bilayer graphene nanoribbons.
Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot
Atomically thin MoS₂: a new direct-gap semiconductor.