Energy Efficient and Process Tolerant Full Adder Design in Near Threshold Region Using FinFET

@article{Islam2010EnergyEA,
  title={Energy Efficient and Process Tolerant Full Adder Design in Near Threshold Region Using FinFET},
  author={Aminul Islam and M. W. Akram and A. Sazzad M. S. Imran and Mohd. Hasan},
  journal={2010 International Symposium on Electronic System Design},
  year={2010},
  pages={56-60}
}
This paper investigates a robust 1-bit static full adder using FinFET at near-threshold region (NTR), a design space where the supply voltage is approximately equal to the threshold voltage of the transistors. This region provides minimum-energy point for the different frequency of operation with more favorable performance and variability characteristics. The proposed design features higher computing speed (by 4.49 x) and lower energy (by 3.90 x) at the expense of 1.13 x higher power… CONTINUE READING

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