Energetic distribution of oxide traps created under negative bias temperature stress and their relation to hydrogen

@inproceedings{Aichinger2010EnergeticDO,
  title={Energetic distribution of oxide traps created under negative bias temperature stress and their relation to hydrogen},
  author={Thomas Aichinger and Michael Nelhiebel and Stefan Decker and Tibor Grasser},
  year={2010}
}
By applying an incremental sweep technique to silicon devices subjected to negative bias temperature stress, we identify two significant peaks of recoverable oxide defects located energetically within the silicon band gap. The first peak is near midgap and is almost fully developed after ten seconds of stress while the second peak is found in the upper half of the silicon band gap and develops gradually as a function of stress time. We obtain very similar density-of-state profiles for two… CONTINUE READING

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