Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials

@article{Shenoy2011EnduranceAS,
  title={Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials},
  author={Ravindra S. Shenoy and K. Gopalakrishnan and Bryan Jackson and Kumar Virwani and Geoffrey W. Burr and Charles T. Rettner and Alvaro Padilla and Donald S. Bethune and Robert M. Shelby and Andrew J. Kellock and Matt Breitwisch and Eric A. Joseph and R. Dasaka and Rudith Sylvana King and Kayla Nguyen and Alexia N. Bowers and Mark C. Jurich and Alexander Friz and {\`O}. Ð. Topuria and Philip Frederick Menora Rice and Bulent N. Kurdi},
  journal={2011 Symposium on VLSI Technology - Digest of Technical Papers},
  year={2011},
  pages={94-95}
}
We demonstrate compact integrated arrays of BEOL-friendly novel access devices (AD) based on Cu-containing MIEC materials [1–3]. In addition to the high current densities and large ON/OFF ratios needed for Phase Change Memory (PCM), scaled-down ADs also exhibit larger voltage margin Vm, ultra-low leakage (<10pA), and much higher endurance (>108) at high current densities. Using CMP, all-good 5×10 AD arrays with Vm > 1.1V are demonstrated in a simplified CMOS-compatible diode-in-via (DIV… CONTINUE READING

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