Encoding Highly Nonequilibrium Boron Concentrations and Abrupt Morphology in p-Type/n-Type Silicon Nanowire Superlattices.

@article{Hill2017EncodingHN,
  title={Encoding Highly Nonequilibrium Boron Concentrations and Abrupt Morphology in p-Type/n-Type Silicon Nanowire Superlattices.},
  author={David J. Hill and Taylor S. Teitsworth and Seokhyoung Kim and Joseph D. Christesen and James F. Cahoon},
  journal={ACS applied materials \& interfaces},
  year={2017},
  volume={9 42},
  pages={
          37105-37111
        }
}
Although silicon (Si) nanowires (NWs) grown by a vapor-liquid-solid (VLS) mechanism have been demonstrated for a range of photonic, electronic, and solar-energy applications, continued progress with these NW-based technologies requires increasingly precise compositional and morphological control of the growth process. However, VLS growth typically encounters problems such as nonselective deposition on sidewalls, inadvertent kinking, unintentional or inhomogeneous doping, and catalyst-induced… 
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