Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide

@inproceedings{JackAAlexanderWebber2016EncapsulationOG,
  title={Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide},
  author={JackAAlexander-Webber and AbhayA Sagade and A. Iaria and ZenasAVanVeldhoven and PhilippBraeuninger-Weimer and RuizhiWang and AndreaCabrero-Vilatela and Marie-BlandineMartin and Jinggao Sui and MalcolmRConnolly},
  year={2016}
}
  • JackAAlexander-Webber, AbhayA Sagade, +7 authors MalcolmRConnolly
  • Published 2016
Wedemonstrate a simple, scalable approach to achieve encapsulated graphene transistors with negligible gate hysteresis, low doping levels and enhancedmobility compared to as-fabricated devices. We engineer the interface between graphene and atomic layer deposited (ALD)Al2O3 by tailoring the growth parameters to achieve effective device encapsulationwhilst… CONTINUE READING