Enabling in-memory computation of binary BLAS using ReRAM crossbar arrays

Abstract

Memristive devices, such as ReRAMs, are fast gaining prominence for their low leakage power, high endurance and non-volatile storage capabilities. ReRAM crossbar arrays also found usage as platform for in-memory computing, particularly for data-intensive computations, due to its inherent capability to perform stateful logic operations. Binary matrix and… (More)
DOI: 10.1109/VLSI-SoC.2016.7753568

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