Enabling in-memory computation of binary BLAS using ReRAM crossbar arrays


Memristive devices, such as ReRAMs, are fast gaining prominence for their low leakage power, high endurance and non-volatile storage capabilities. ReRAM crossbar arrays also found usage as platform for in-memory computing, particularly for data-intensive computations, due to its inherent capability to perform stateful logic operations. Binary matrix and… (More)
DOI: 10.1109/VLSI-SoC.2016.7753568


Figures and Tables

Sorry, we couldn't extract any figures or tables for this paper.

Slides referencing similar topics