Enabling a reliable STT-MRAM main memory simulation

  title={Enabling a reliable STT-MRAM main memory simulation},
  author={Kazi Asifuzzaman and Rommel Sanchez Verdejo and Petar Radojkovic},
STT-MRAM is a promising new memory technology with very desirable set of properties such as non-volatility, byte-addressability and high endurance. It has the potential to become the universal memory that could be incorporated to all levels of memory hierarchy. Although STT-MRAM technology got significant attention of various major memory manufacturers, to this day, academic research of STT-MRAM main memory remains marginal. This is mainly due to the unavailability of publicly available… CONTINUE READING