Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layer

Abstract

The emitter size effect for fully self-aligned AlGaAs-GaAs heterojunction bipolar transistors (HBTs) with depleted AlGaAs passivation layers, in which the partially thinned AlGaAs emitter is self-aligned by using the dual sidewall process, is investigated. It is demonstrated that drastic improvement in the emitter size effect can be achieved with an AlGaAs… (More)

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Cite this paper

@article{Hayama1990EmitterSE, title={Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layer}, author={Naomi Hayama and Kiyoko Honjo}, journal={IEEE Electron Device Letters}, year={1990}, volume={11}, pages={388-390} }